Silicon carbide sputtering target, diam. x thickness 4 inch x 6 mm, 99.5%
: Silicon carbide (SiC) - a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.
: S 3067 (OTTO) Silicon carbide sputtering target, diam. x thickness 4 inch x 6 mm, 99.5% Cas 409-21-2 - used for its hardness in abrasive machining processes such as grinding, honing, water-jet cutting and sandblasting.
Properties
Safety Information
Hazard Codes Xi
Risk Statements 36/37/38
Safety Statements 26-36
WGK Germany 3
| Packings | Price (INR) |
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1 pc
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POR
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