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Specification Sheet

Gallium arsenide (single crystal substrate), (111)B ± 0.5o

: GAW 099

: Epi-ready

: GaAs

: 144.64

: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

: Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.


Properties

: (111)B ± 0.5o n-type doping

: 0.01 - 0.1 ohm.cm

: 2” (50.8 mm ± 0.4mm)

: 300 – 400 micron

: one side polished

: Ra < 15 Å


Safety Information

RIDADR UN 1557 6.1 / PGII
WGK Germany 3


PackingsPrice (INR)
1 pc POR
10 pc POR
1000 pcs POR