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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
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Zero-order Waveplates, Dia 10 mm, Wavelength (λ) 595 nm
Plano convex lens, dia 50.8 mm, focal length 7.5 cm
Potassium Bromide Window (13mm Dia. x 2mm Thick)
Plano Convex Spherical Lens, Focal Length : 500mm
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