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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
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(For eg. B 1615-0108)
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Plano Convex Lens, Dia 50 mm, Focal Length 200 mm
Broadband polarizing cube Beam splitter, 12.7 x 12.7 x 12.7 mm
Gold mirror, (L x W x thickness 25 mm x 25 mm x 6 mm)
Corner cube prism
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