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Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion
SSW 009 (otto) Silicon wafer (single substrase), <100>, N-type, contains phosphorus (Ph) as dopant, diam. x thickness 100 mm x 0.525 mm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.
WGK Germany 2
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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7439-89-6
Iron sputtering target, diam. x thickness 50 mm x 6 mm, 99.99%
409-21-2
Silicon carbide dia. x thick 1 inch × 3 mm
7440-57-5
Gold sputtering target, diam. × thickness 50.8 mm × 6 mm, 99.99%
9004-35-7
Cellulose acetate
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.