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Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm

Code: SSC 064

Synonyms: SiC Substrates, Silicon Carbide single crystal substrate


SiC

9001

40.10

Box
18%

SiC

9001

40.10

Box

18%
PackingsPrice (INR)
1 pc 765099.00
10 pc POR
Packings
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Properties
4H

N Type

100 mm

± 1%

1.0 mm

± 1%

≤5/cm2

≤0.03 ohm.cm

≤25 um

≤50 um

≤30 Arc-sec

Double side optically polished

Off axis 4.0° ± 0.5° toward <1120>

None

C-face and Si- face marked distinctly

Description

Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.

Application

SSC 064 (OTTO) Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm - used in power applications including diodes, transistors and LED.

Safety Information

Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 765099.00
10 pc POR