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Specification Sheet

Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm

: SiC Substrates, Silicon Carbide single crystal substrate

: SSC 064

: SiC

: 40.10

: Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.

: SSC 064 (OTTO) Silicon carbide (4H-SiC) wafers, dia 100 mm, thick 1.0 mm - used in power applications including diodes, transistors and LED.


Properties

: 4H

: N Type

: 100 mm

: ± 1%

: 1.0 mm

: ± 1%

: ≤5/cm2

: ≤0.03 ohm.cm

: ≤25 um

: ≤50 um

: ≤30 Arc-sec

: Double side optically polished

: Off axis 4.0° ± 0.5° toward <1120>

: None

: C-face and Si- face marked distinctly


Safety Information

Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves
WGK Germany 3


PackingsPrice (INR)
1 pc 765099.00
10 pc POR