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Synonyms: Inp single crystal substrate
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
I 9156 (OTTO) Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm Cas 22398-80-7 - used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
RIDADR NONH for all modes of transport
Certificate Of Analysis
(For eg. B 1615-0108)
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Silicon wafers, P-type, dia 4 inch, thick 0.525 mm [Thermal oxide wafer 100 nm SiO2 layer on Si (100)]
Half wave plate (Diameter: 12.7mm , Coating: AR/ AR, R<0.25%@1064nm)
7440-21-3
Silicon wafer, single crystal, single side polished, <100>, dia x thickness 100 mm x 500 μm
Silicon wafers, N-type, dia 4 inch, thick 0.50 mm [Thermal oxide wafer 300 nm SiO2 layer on Si (100)]
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