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Certificate of Analysis

Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm

Code: I 9156

(For eg. B 1615-0108)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

I 9156 (OTTO) Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm Cas 22398-80-7 - used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.