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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.TTV (um) - <10Surface Finish - Epi ReadyPacking = Individually Packed in inert atmosphere
GAS 369 (OTTO) Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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Plano Convex Lens, Dia 10 mm, Focal Length 5 mm
β Barium borate single crystal (20 x 20 x 0.5 mm)
KRS-5 (Thallium-Bromoiodide) Window, (50.8 mm Dia. x 3 mm Thick)
Plano convex lens, dia 50.8 mm, focal length 10 cm
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.