can't read?
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
For any quries, please write to us at
Nd YLF laser rod (1%, a-cut, dia5*110mm, AR/AR@1053nm)
7440-21-3
Silicon wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. x thickness 2 in. x 0.275 mm
12063-98-8
Gallium phosphide wafers, <100>, diam. x thickness 50.8mm. x 0.45 mm
Band pass filter, 532 nm, 25.4 mm
Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.