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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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BK7 glass substrates, 50.8 mm dia, 1 mm thick
BK7 glass substrates, 50 mm dia, 1 mm thick
Plano Convex Spherical Lens, Dia 25.4mm, Focal Length 30mm, AR @ 532 nm
Calcium fluoride window diam. x thick 15 mm x 2 mm
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