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Gallium arsenide wafers, N-TYPE, dia 76.2 mm, thick 500 µm, <100>

Code: GAW 144

GaAs

28429090

144.64

Bottle / Drum
18%

GaAs

28429090

144.64

Bottle / Drum

18%
PackingsPrice (INR)
1 pc POR
10 pc POR
1000 pcs POR
Packings
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Properties
n-type(Si doped), VGF grown

76.2 mm

± 0.5 mm

500 µm

±25 µm

0.4 to 4 x 10E18/cc

Ohm/square

≤1000cm2

EJ SEMI, Primary: 22±2mm @ (0-1-1)±0.25°

22 ± 2 mm

0.25°

Polished one side

11 ± 2 mm

Description

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.

Packing = Individually Packed in inert atmosphere

Application

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Safety Information

RIDADR UN 1557 6.1 / PGII


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc POR
10 pc POR
1000 pcs POR