Gallium arsenide wafers, N-TYPE, dia 76.2 mm, thick 500 µm, <100>
: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.
Packing = Individually Packed in inert atmosphere
: GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
Properties
: n-type(Si doped), VGF grown
: EJ SEMI, Primary: 22±2mm @ (0-1-1)±0.25°
Safety Information
RIDADR UN 1557 6.1 / PGII
WGK Germany 3
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1 pc
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POR
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10 pc
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POR
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1000 pcs
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POR
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