Technical data sheet (TDS) / Specifications sheet

Hafnium oxide,-1250 mesh, 99.9%

: Hafnium(IV) oxide, Hafnium dioxide, Hafnia

: H 2367

: puriss

: HfO2

: 99.9%

: 210.49

: Hafnium oxide is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium.

: H 2367 (OTTO) Hafnium oxide,-1250 mesh, 99.9% Cas 12055-23-1 - used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors.


Properties

: 99.9%

: Powder

: White to off white

: -1250 mesh

: 2758 °C


Safety Information

Safety Statements 22-24/25
WGK Germany 3


PackingsPrice (INR)
1 gm POR
5 gm POR
25 gm POR
100 gm POR
1 kg POR