Gallium(III) nitride, 99.99%
: Gallium nitride, Gallium trinitride
: Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices.
: G 1670 (OTTO) Gallium(III) nitride, 99.99% Cas 25617-97-4 -used to read Blu-ray Discs. When doped with a suitable transition metal such as mangallium nitrideese, Gallium nitride is a promising spintronics material (magnetic semiconductors).
Properties
Safety Information
Hazard statements H317
Precautionary statements P280
Personal Protective Equipment Eyeshields, Faceshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
Safety Statements 22-24/25
WGK Germany 3
| Packings | Price (INR) |
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10 gm
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59004.00
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50 gm
|
179109.00
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100 gm
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POR
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1 kg
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POR
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