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Specification Sheet

Gallium arsenide (GaAs substrate), <111>, diam. × thickness 2” (50.8 mm) × 0.35 mm

: GaAs substrate

: GAS 135

: Epi-ready

: GaAs

: 144.64

: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

: Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.


Properties

: <111>

: ±0.5 °

: 2” (50.8 mm)

: < 350 micron

: ± 1%

: Front side polished

: 5 Å on front surface or better

: Undoped

: 5 x 105 or less

: ≥ 1x107 ohm-cm


Safety Information

RIDADR UN 1557 6.1 / PGII
WGK Germany 3


PackingsPrice (INR)
1 pc 207099.00
10 pc POR
Custom size POR