Enquiry

Specification Sheet

Silicon wafer (single substrase), <100>, n-type, contains Arsenic as dopant, diam. × thickness 4 in. × 0.2 mm

: SCS 081

: Si

: 28.09

: Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

: sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics. Sapphire substrates for photoelectronic applications, including the high brightness LED market.


Properties

: n-Type

: <100>

: ±0.1 º or better

: 4 Inch

: ±0.1 %

: 0.2 mm

: ±0.1 %

: Arsenic as dopant

: 2355 °C

: ~0.001-0.005 Ωcm


Safety Information

WGK Germany 2
RTECS VW0400000


PackingsPrice (INR)
1 pc 24039.00
10 pc 201069.00
Custom size POR