Enquiry

Specification Sheet

Silicon wafer (single substrase), <100>, p-type, contains Boron as dopant, diam. × thickness 2 inch x 0.3 mm

: SCS 036

: Si

: 28.09

: Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

: sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics. Sapphire substrates for photoelectronic applications, including the high brightness LED market.


Properties

: p-Type

: <100>

: ±0.1 º or better

: 2 Inch

: ±0.1 %

: 0.3 mm

: ±0.1 %

: Boron as dopant

: 2355 °C

: ~1-5 Ωcm


Safety Information

WGK Germany 2
RTECS VW0400000


PackingsPrice (INR)
1 pc 4869.00
10 pc 43209.00
Custom size POR