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Technical data sheet (TDS) / Specifications sheet

Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 100 mm x 525 μm

: S 5770

: PRIME

: Si

: Double side polished

: 28.09

: Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

: S 5770 (OTTO) Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.


Properties

: 100 mm

: ± 0.5 mm

: 250 μm

: ± 20 μm

: Single side polished

: P-type

: <100>

: ± 0.5°

: Boron as dopant

: 1-10 ohm.cm or better


Safety Information

WGK Germany 2


PackingsPrice (INR)
1 pc POR
10 pc POR
Custom size POR