Enquiry

Specification Sheet

Silicon wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm

: S 6003

: PRIME

: Si

: Double side polished

: 28.09

: Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

: S 6003 (OTTO) Silicon wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in x 250 μm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.


Properties

: 2 inch

: ± 1%

: 250 μm

: ± 1%

: Double side polished

: P-type

: (111)

: ± 0.5°

: 1-5 ohm.cm or less

: Boron as dopant

: Less than equal to 60 µm

: Less than equal to 60 µm

: < 5Å


Safety Information

WGK Germany 2


PackingsPrice (INR)
1 pc 21906.00
10 pc POR
Custom size POR