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Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm

Code: SSC 090

Synonyms: SiC Substrates, Silicon Carbide single crystal substrate


SiC

9001

40.10

Box
18%

SiC

9001

40.10

Box

18%
PackingsPrice (INR)
1 pc POR
10 pc POR
Packings
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Properties
4H

N Type

76.2 mm

± 0.4 mm

0.35 mm

± 1%

22 mm (± 10%)

≤10 um

≤25 um

≤30 Arc-sec

Rq ≤0.35 nm

None

Description

Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.

Application

SSC 090 (OTTO) Silicon carbide (4H-SiC) wafers, dia 76.2 mm, thick 0.35 mm - used in power applications including diodes, transistors and LED.

Safety Information

Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc POR
10 pc POR