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Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm

Code: SSCE 009

Synonyms: 4H-SiC Epitaxial Wafer


eX

SiC

9001

40.10

Box
18%

eX

SiC

9001

40.10

Box

18%
PackingsPrice (INR)
1 pc POR
10 pc POR
Custom size POR
Packings
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Properties
4H

N Type

101 mm

± 5%

0.35 mm

± 5%

22 mm (± 10%)

≤10 um

≤25 um

≤30 Arc-sec

Rq ≤0.35 nm

None

Description

Silicon carbide (SiC), also known as carborundum is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.

Application

SSCE 009 (OTTO) Silicon carbide (4H-SiC Epitaxial Wafer) wafers, dia 101 mm, thick 0.35 mm - used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices.

Safety Information

Personal Protective Equipment dust mask type N95 (US), Eyeshields, Gloves


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc POR
10 pc POR
Custom size POR