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Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth.
Gallium oxide single crystals has been studied in the use of lasers, phosphors, and luminescent materials.
WGK Germany 1
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
For any quries, please write to us at
7664-38-2
Orthophosphoric acid, 85 wt.% in H2O, 99.99% trace metals basis
4671-75-4
Tetradecylphosphonic acid, 97%
7440-21-3
Silicon wafer (single substrase), <100>, n-type, contains Phosphorus as dopant, diam. × thickness 2 inch x 0.3 mm
12025-39-7
Germanium telluride, 99.999%
Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.