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Micro/Nanoelectronics

Micro/Nanoelectronics

Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre-scale or smaller.
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively.
Otto Chemie Pvt Ltd - Manufacturers of Micro/Nanoelectronics compounds in India.

Micro/Nanoelectronics

1 to 50 of 63 item(s) displayed

Code Product Name CAS No. MSDS Pricing
A 1932 Allylpalladium(II) chloride dimer, 98%
12012-95-2 View
B 0521 Boron silicide, 200 mesh, 98%
12008-29-6 View
B 0669 Bismuth(III) selenide, - 350 mesh, 99.99%
12068-69-8 View
B 1008 Boric acid, 99.97%
10043-35-3 View
B 1327 Barium magnesium aluminate, europium doped, 99%
724792-82-9 View
B 1963 Boric acid, 99.9995%
10043-35-3 View
B 1966 meta-Boric acid, 99%
13460-50-9 View
B 1968 Boric acid, 99.999%
10043-35-3 View
C 1787 Cerium magnesium aluminate, terbium doped, 99%
106495-57-2 View
C 7956 Cobalt(III) acetylacetonate, 98%
21679-46-9 View
D 0156 2-(Dodecylthiocarbonothioylthio)-2-methylpropionic acid, 98% (HPLC)
461642-78-4 View
D 0961 6,13-Diphenylpentacene, 98%
76727-11-2 View
D 2420 1-Dodecanethiol, 98%
112-55-0 View
D 6052 Dichlorodiphenylsilane, 97%
80-10-4 View
F 1436 Fluosilicic acid
16961-83-4 View
H 0172 Hexylphosphonic acid, 95%
4721-24-8 View
H 1392a 1-Hexanethiol, 97%
111-31-9 View
H 3042 Hafnium tert-butoxide, 99%
2172-02-3 View
H 3124 Hafnium tert-butoxide, 99.9%+
2172-02-3 View
H 5811 Hexamethyldisilane, 98%
1450-14-2 View
M 0138 Methyltrimethoxysilane, 98%
1185-55-3 View
M 3330 (3-Mercaptopropyl) trimethoxysilane, 95%
4420-74-0 View
M 5740 Molybdenum disulphide, ~6 μm, 99%
1317-33-5 View
N 0891 Niobium diselenide, ≥99.9%
12034-77-4 View
N 6825 Niobium boride, 99%
12007-29-3 View
O 0126 Octadecylphosphonic acid, 97%
4724-47-4 View
O 1334 Orthophosphoric acid, 85 wt.% in H2O, 99.99% trace metals basis
7664-38-2 View
P 0496 Poly(acrylic acid, sodium salt) solution, average Mw ~1,200, 45 wt.% in H2O
9003-04-7 View
P 0500 Poly(acrylic acid, sodium salt) solution, average Mw ~8,000, 45 wt.% in H2O
9003-04-7 View
P 0501 Poly(acrylic acid, sodium salt) solution, average Mw ~15,000, 35 wt.% in H2O
9003-04-7 View
P 0987 PSS-[3-(2-Aminoethyl)amino]propyl-Heptaisobutyl substituted
444315-16-6 View
P 2144 Potassium tert-butoxide, 0.5 M in THF
865-47-4 View
P 2145 Potassium tert-butoxide, puriss, 98%
865-47-4 View
P 3015 Poly(dimethylsiloxane), hydroxy terminated viscosity ~750 cSt
70131-67-8 View
P 3201 Poly(dimethylsiloxane), hydroxy terminated average Mn ~550, viscosity ~25 cSt
70131-67-8 View
P 3224 Poly(dimethylsiloxane), hydroxy terminated viscosity ~65 cSt
70131-67-8 View
P 3947 Poly(dimethylsiloxane), hydroxy terminated average Mn ~110,000, viscosity ~50,000 cSt
70131-67-8 View
P 5065 Polycarbomethylsilane, average Mw ~1500-2000
62306-27-8 View
P 5066 Polycarbomethylsilane, average Mw ~1500-2200
62306-27-8 View
P 5067 Polycarbomethylsilane, average Mw ~1500-2500
62306-27-8 View
P 5073 Polycarbomethylsilane, average Mw ~900-1800
62306-27-8 View
P 5454 Poly(dimethylsilylene)
28883-63-8 View
P 6509 Poly(ethylene glycol) methyl ether methacrylate, average Mn 500
26915-72-0 View
P 6511 Poly(ethylene glycol) methyl ether methacrylate, average Mn 950
26915-72-0 View
P 7703 Phosphoric acid crystalline, ≥99.999% trace metals basis
7664-38-2 View
P 7709 Poly(dimethylsiloxane), hydroxy terminated viscosity ~10000-15000 cSt
70131-67-8 View
R 0601 Ruthenium(IV) oxide hydrate, 99.99%
32740-79-7 View
S 2505 Stannic oxide, 99%
18282-10-5 View
S 2517 Stannic oxide, GR 99%+
18282-10-5 View
S 3209 Sodium phenoxide, 98%
139-02-6 View

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We assume no liability for misuse or unauthorized application of the product. Please test before use.