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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.TTV (um) - <10Surface Finish - Epi ReadyPacking = Individually Packed in inert atmosphere
GAS 369 (OTTO) Gallium arsenide wafers, <100>, diam. × thickness 76.2 mm × 625 mm - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Plano Convex Lens, Dia 50.8 mm, Focal Length 250 mm
Plano Convex Lens, Dia 25.4 mm, Focal Length 300 mm
Zero-order Waveplates, Dia 10 mm, Wavelength (λ) 595 nm
Laser Line Clean-Up Filters, Wavelength 514.5 nm
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