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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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Indium phosphide substrates, <100>, N-type, contains sulphur as dopant, diam. × thickness 50.5 mm × 350 μm
1303-00-0
Gallium arsenide (GaAs substrate), <111>, diam. × thickness 2” (50.8 mm) × 0.35 mm
7789-24-4
Lithium fluoride window diam. x thick 10 mm x 1.5 mm
Barium Fluoride Crystal / Window (40mm Dia. x 3.5mm Thick)
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