Silicon carbide sputtering target, diam. x thickness 4 inch x 6 mm, 99.5%

Silicon carbide (SiC) - a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.

S 3067 (OTTO) Silicon carbide sputtering target, diam. x thickness 4 inch x 6 mm, 99.5% Cas 409-21-2 - used for its hardness in abrasive machining processes such as grinding, honing, water-jet cutting and sandblasting.