Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices.
G 1670 (OTTO) Gallium(III) nitride, 99.99% Cas 25617-97-4 -used to read Blu-ray Discs. When doped with a suitable transition metal such as mangallium nitrideese, Gallium nitride is a promising spintronics material (magnetic semiconductors).