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Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm

Code: S 6075

PRIME

Si

9002

Double side polished

28.09

Bottle / Drum
18%

PRIME

Si

9002

Double side polished

28.09

Bottle / Drum

18%
PackingsPrice (INR)
1 pc 19809.00
10 pc POR
Custom size POR
Packings
Enquire
Properties
4 inch

± 1%

525 μm

± 1%

Single side

P-type

<100>

± 0.5°

>200 ohm.cm

Boron as dopant

< 0.8 nm

Description

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Application

S 6075 (OTTO) Silicon wafer, <100>, P-type, contains boron as dopant, diam. × thickness 4 in x 525 μm - used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.

Safety Information

WGK Germany 2

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 19809.00
10 pc POR
Custom size POR