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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
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Laser Grade Plano Convex Lens, Dia 50 mm, Focal Length : 200 mm
Plano Convex Lens, Dia 50 mm, Focal Length 120 mm
Potassium Bromide Window (13mm Dia. x 2mm Thick)
Plano convex lens, dia 50.8 mm, focal length 20 cm
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