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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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7440-21-3
Silicon wafer (single side polished), <100>, diam. × thickness 50.8 mm × 0.3 mm
Plano Convex Lens, Dia 25 mm, Focal Length 25 mm
Plano Convex Lens, Dia 25 mm, Focal Length 100 mm
22398-80-7
Indium phosphide (single crystal substrate), (100) ± 0.5o
Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.