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Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.Packing = Individually Packed in inert atmosphere
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
RIDADR UN 1557 6.1 / PGII
Certificate Of Analysis
(For eg. B 1615-0108)
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Mounted Microlens Array, 10 mm x 10 mm x 1.2 mm
β Barium borate single crystal (10 x 10 x 0.3 mm)
Zero Order Quarter Wave Retardation Plate, Dia 25 mm, Thick 6 mm
Potassium Bromide Window, (40mm Dia. x 4mm Thick)
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