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Gallium arsenide (GaAs substrate), <100>, (undoped, 10 x 10 x 0.5 mm)

Code: GSC 111

Synonyms: GaAs substrate

1303-00-0
GaAs
9001 / 9002
144.64
Box
18%
1303-00-0
GaAs
9001 / 9002
144.64
Box
18%
PackingsPrice (INR)
1 pc 207099.00
10 pc POR
Custom size POR
Packings
Gallium arsenide (GaAs substrate), <100>, (undoped, 10 x 10 x 0.5 mm), GSC 111, (1)
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Properties
Crystal optics,Chemically coated windows / substrates
<100>
± 0.5°
10 mm x 10 mm
± 1%
0.5 mm ( 500 μm)
± 25 μm
Undoped
Single sides polished
< 0.5 nm
Description

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Application

Gallium arsenide (GaAs substrate), <100>, (undoped, 10 x 10 x 0.5 mm) - used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Safety Information

RIDADR UN 1557 6.1 / PGII

WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

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DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.

PackingsPrice (INR)
1 pc 207099.00
10 pc POR
Custom size POR