Enquiry

Gallium arsenide (GaAs substrate), <001>, diam. × thickness 2” (50.8 mm) × 0.35 mm

Code: GAS 243

Synonyms: GaAs substrate


Epi-ready

GaAs

9001 / 9002

144.64

Box
18%

Epi-ready

GaAs

9001 / 9002

144.64

Box

18%
PackingsPrice (INR)
1 pc 36090.00
10 pc POR
Custom size POR
Packings
Enquire
Properties
<001>

±0.5 °

2” (50.8 mm)

350 micron or more

Front side polished

5 Å on front surface or better

Undoped

5 x 105 or less

≥ 1x107 ohm-cm

± 0.2mm

Description

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Application

Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Safety Information

RIDADR UN 1557 6.1 / PGII


WGK Germany 3

Documentation

Certificate Of Analysis

(For eg. B 1615-0108)

Other Documents

For any quries, please write to us at

qc@ottokemi.com
Technical Services

Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.

Enquire Now

DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.


PackingsPrice (INR)
1 pc 36090.00
10 pc POR
Custom size POR