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Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV.
T 1781 (OTTO) Tin telluride, 99.999% Cas 12040-02-7 - used as an infrared detector material.
RIDADR NONH for all modes of transport
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
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12060-59-2
Strontium titanium oxide substrate, 10 mm x 10 mm x 0.5 mm, polished one side, <111> orientation, 99.99%
409-21-2
Silicon carbide, 0.1 - 5 µm, 99.9%
Poly(methyl)methacrylate Microparticles [Mean Diameter (µm) 0.350]
12068-69-8
Bismuth selenide doped with cobalt, sputtering target, diam. × thickness 3 inch × 3 mm, 99.95% (5 wt% Co)
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