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Kindly note: Due to ongoing raw material / metal shortages and market price volatility, all orders including those placed online will be subject to reconfirmation by our sales team, including revised pricing and delivery dates. We appreciate your understanding.
Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.18 eV.
T 1781 (OTTO) Tin telluride, 99.999% Cas 12040-02-7 - used as an infrared detector material.
RIDADR NONH for all modes of transport
Certificate Of Analysis
(For eg. B 1615-0108)
Other Documents
For any quries, please write to us at
Silicon wafer, <100>, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm
1309-64-4
Antimony(III) oxide, 99.999% (metals basis)
12068-51-8
Magnesium aluminate, single crystal substrates, 10 mm × 10 mm × 0.5 mm
7440-21-3
Silicon wafer (single substrase), <100>, p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm
Our team of R&D Experts and Scientists have expertise in all areas of research of Lab Chemicals, Nano Technology, Life Science, Custom Synthesis, Chromatography, and many others.
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. Not for medical, household or any other uses, for lab use only, Please test before use.