Silicon wafer, <100>, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm
: Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion
: SSW 108 (OTTO) Silicon wafer, <100>, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm - used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics, photoelectronic applications, including the high brightness LED market.
Properties
: Front side miror polished, No secondary flat
: {110} ± 1 ° as per SEMI standard
Safety Information
WGK Germany 2
RTECS VW0400000
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1 pc
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POR
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10 pc
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POR
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Custom size
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POR
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