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Micro/Nanoelectronics

Micro/Nanoelectronics


Microelectronics is a subfield of electronics. As the name suggests, microelectronics relates to the study and manufacture (or microfabrication) of very small electronic designs and components. Usually, but not always, this means micrometre-scale or smaller.

Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively.

Otto Chemie Pvt Ltd - Manufacturers of Micro/Nanoelectronics compounds in India.

Micro/Nanoelectronics

1 to 50 of 58 item(s) displayed

Code Product Name CAS No. MSDS Pricing
A 1932 Allylpalladium(II) chloride dimer, 98% 12012-95-2 View
B 0521 Boron silicide, 200 mesh, 98% 12008-29-6 View
B 0669 Bismuth(III) selenide, - 350 mesh, 99.99% 12068-69-8 View
B 1008 Boric acid, 99.97% 10043-35-3 View
B 1327 Barium magnesium aluminate, europium doped, 99% 724792-82-9 View
B 1963 Boric acid, 99.9995% 10043-35-3 View
B 1966 meta-Boric acid, 99% 13460-50-9 View
B 1968 Boric acid, 99.999% 10043-35-3 View
C 1787 Cerium magnesium aluminate, terbium doped, 99% 106495-57-2 View
C 7956 Cobalt(III) acetylacetonate, 98% 21679-46-9 View
D 0156 2-(Dodecylthiocarbonothioylthio)-2-methylpropionic acid, 98% (HPLC) 461642-78-4 View
D 0961 6,13-Diphenylpentacene, 98% 76727-11-2 View
D 2420 1-Dodecanethiol, 98% 112-55-0 View
D 6052 Dichlorodiphenylsilane, 97% 80-10-4 View
F 1436 Fluosilicic acid 16961-83-4 View
H 0172 Hexylphosphonic acid, 95% 4721-24-8 View
H 1392a 1-Hexanethiol, 97% 111-31-9 View
H 3042 Hafnium tert-butoxide, 99% 2172-02-3 View
H 3124 Hafnium tert-butoxide, 99.9%+ 2172-02-3 View
H 5811 Hexamethyldisilane, 98% 1450-14-2 View
M 0138 Methyltrimethoxysilane, 98% 1185-55-3 View
M 3330 (3-Mercaptopropyl) trimethoxysilane, 95% 4420-74-0 View
M 5740 Molybdenum disulphide, ~6 μm, 99% 1317-33-5 View
N 0891 Niobium diselenide, ≥99.9% 12034-77-4 View
N 6825 Niobium boride, 99% 12007-29-3 View
O 0126 Octadecylphosphonic acid, 97% 4724-47-4 View
O 1334 Orthophosphoric acid, 85 wt.% in H2O, 99.99% trace metals basis 7664-38-2 View
P 0496 Poly(acrylic acid, sodium salt) solution, average Mw ~1,200, 45 wt.% in H2O 9003-04-7 View
P 0500 Poly(acrylic acid, sodium salt) solution, average Mw ~8,000, 45 wt.% in H2O 9003-04-7 View
P 0501 Poly(acrylic acid, sodium salt) solution, average Mw ~15,000, 35 wt.% in H2O 9003-04-7 View
P 0987 PSS-[3-(2-Aminoethyl)amino]propyl-Heptaisobutyl substituted 444315-16-6 View
P 2145 Potassium tert-butoxide, puriss, 98% 865-47-4 View
P 3015 Poly(dimethylsiloxane), hydroxy terminated viscosity ~750 cSt 70131-67-8 View
P 3201 Poly(dimethylsiloxane), hydroxy terminated average Mn ~550, viscosity ~25 cSt 70131-67-8 View
P 3224 Poly(dimethylsiloxane), hydroxy terminated viscosity ~65 cSt 70131-67-8 View
P 3947 Poly(dimethylsiloxane), hydroxy terminated average Mn ~110,000, viscosity ~50,000 cSt 70131-67-8 View
P 5066 Polycarbomethylsilane, average Mw ~1500-2200 62306-27-8 View
P 5067 Polycarbomethylsilane, average Mw ~1500-2500 62306-27-8 View
P 5454 Poly(dimethylsilylene) 28883-63-8 View
P 6509 Poly(ethylene glycol) methyl ether methacrylate, average Mn 500 26915-72-0 View
P 6511 Poly(ethylene glycol) methyl ether methacrylate, average Mn 950 26915-72-0 View
P 7703 Phosphoric acid crystalline, ≥99.999% trace metals basis 7664-38-2 View
R 0601 Ruthenium(IV) oxide hydrate, 99.99% 32740-79-7 View
S 2505 Stannic oxide, 99% 18282-10-5 View
S 2517 Stannic oxide, GR 99%+ 18282-10-5 View
S 3209 Sodium phenoxide, 98% 139-02-6 View
S 6841 Stannic oxide, 99.9% 18282-10-5 View
T 0324 Triethoxymethylsilane, 99% 2031-67-6 View
T 0369 Tetradecylphosphonic acid, 97% 4671-75-4 View
T 0698 Titania paste, transparent View

DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
Not for medical, household or any other uses, for lab use only, Please test before use.