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Certificate of Analysis

Silicon wafer, <100>, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm

Code: SSW 108

(For eg. B 1615-0108)

Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

SSW 108 (OTTO) Silicon wafer, <100>, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm - used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics, photoelectronic applications, including the high brightness LED market.