Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion
SSW 108 (OTTO) Silicon wafer, <100>, p-type, contains Boron (B) as dopant, diam. x thickness 150 mm x 320 μm - used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics, photoelectronic applications, including the high brightness LED market.