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Hafnium(IV) oxide, Hafnium dioxide, Hafnia
H 2367
puriss
HfO2
28259090
18%
12055-23-1
99.9%
210.49
Bottle / Drum
H 2367 (OTTO) Hafnium oxide,-1250 mesh, 99.9% Cas 12055-23-1 - used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors.
Hafnium oxide is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium.
Metal & ceramic science, Salts
Powder
White to off white
-1250 mesh
2758 °C
Safety Statements 22-24/25WGK Germany 3
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. For laboratory use only. Not for drug, medical, household, or any other unauthorized application. We assume no liability for misuse or unauthorized application of the product. Please test before use.