Otto Chemie Pvt. Ltd.

Phone : +91-22-2207 0099
Email : info@ottokemi.com, sales@ottokemi.com

Product Details

Gallium arsenide wafers, p-TYPE, dia 76.2mm, thick 500 µm, <100>

GAW 135

GaAs

28429090

18%

1303-00-0

144.64

Bottle / Drum

GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.

Packing = Individually Packed in inert atmosphere

Properties

Crystal optics, Chemically coated windows / substrates

p-type(zn or C doped), VGF grown

76.2 mm

± 0.5 mm

500 µm

±25 µm

0.5 to 5 x 10E19/cc

Ohm/square

≤5000cm2

US(0-1-1) ±0.2 degree/EJ

22 ± 2 mm

0.25°

Polished one side

11 ± 2 mm

Safety Information

RIDADR UN 1557 6.1 / PGII
WGK Germany 3

PackingsPrice (INR)
1 pc POR
10 pc POR
1000 pcs POR

DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
For laboratory use only. Not for drug, medical, household, or any other unauthorized application.
We assume no liability for misuse or unauthorized application of the product. Please test before use.