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GaAs Substrate
GAW 090
Epi-ready
GaAs
28429090
18%
1303-00-0
144.64
Bottle / Drum
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure.
Crystal optics, Chemically coated windows / substrates
(100) ± 0.5o n-type doping
0.01 - 0.1 ohm.cm
2” (50.8 mm ± 0.4mm)
300 – 400 micron
one side polished
Ra < 15 Å
RIDADR UN 1557 6.1 / PGII WGK Germany 3
DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received. For laboratory use only. Not for drug, medical, household, or any other unauthorized application. We assume no liability for misuse or unauthorized application of the product. Please test before use.