Otto Chemie Pvt. Ltd.

Phone : +91-22-2207 0099
Email : info@ottokemi.com, sales@ottokemi.com

Product Details

Gallium arsenide (GaAs substrate), <111>, diam. × thickness 2” (50.8 mm) × 0.35 mm

GaAs substrate

GAS 135

Epi-ready

GaAs

9001 / 9002

18%

1303-00-0

144.64

Box

Gallium arsenide (GaAs) is often used as a substrate material for the epitaxial growth of other III-V semiconductors including: Indium gallium arsenide, Aluminium gallium arsenide and others.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Properties

Crystal optics, Chemically coated windows / substrates

<111>

±0.5 °

2” (50.8 mm)

< 350 micron

± 1%

Front side polished

5 Å on front surface or better

Undoped

5 x 105 or less

≥ 1x107 ohm-cm

Safety Information

RIDADR UN 1557 6.1 / PGII
WGK Germany 3

PackingsPrice (INR)
1 pc 258874.00
10 pc POR
Custom size POR

DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
For laboratory use only. Not for drug, medical, household, or any other unauthorized application.
We assume no liability for misuse or unauthorized application of the product. Please test before use.