Otto Chemie Pvt. Ltd.

Phone : +91-22-2207 0099
Email : info@ottokemi.com, sales@ottokemi.com


Product Details

Silicon wafer (single substrase), <100>, p-type, contains Boron (B) as dopant, diam. × thickness 2 in. × 0.1 mm

SCS 072

Si

9001 / 9002

18%

7440-21-3

28.09

Container

sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics. Sapphire substrates for photoelectronic applications, including the high brightness LED market.

Single crystal sapphire has a unique combination of physical, chemical and optical properties allowing it to withstand high temperatures, high pressure, thermal shock, and water or sand erosion

Properties

Materials science, Single crystal substrates

p-Type

<100>

±0.1 º or better

2 Inch

±0.1 %

0.1 mm

±0.1 %

Boron as dopant

2355 °C

~5-20 Ωcm


Safety Information

WGK Germany 2
RTECS VW0400000


PackingsPrice (INR)
1 pc 14636.00
10 pc 135124.00
Custom size POR

DisclaimerThe above particulars do not release the customer from the obligation to carry out an inspection of goods received.
For laboratory use only. Not for drug, medical, household, or any other unauthorized application.
We assume no liability for misuse or unauthorized application of the product. Please test before use.